ASU Electronic Theses and Dissertations

This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.

Contributor
Subject
Date Range
2010 2020

Recent Submissions

In 2022, integrated circuit interconnects will approach 10 nm and the diffusion barrier layers needed to ensure long lasting devices will be at 1 nm. This dimension means the interconnect will be dominated by the interface and it has been shown the interface is currently eroding device performance. The standard interconnect system has three layers - a Copper metal core, a Tantalum Adhesion layer and a Tantalum Nitride Diffusion Barrier Layer. An alternate interconnect schema is a Tantalum Nitride barrier layer and Silver as a metal. The adhesion layer is removed from the system along with changing to an alternate, …

Contributors
Grumski, Michael, Adams, James, Krause, Stephen, et al.
Created Date
2012

CpG methylation is an essential requirement for the normal development of mammals, but aberrant changes in the methylation can lead to tumor progression and cancer. An in-depth understanding of this phenomenon can provide insights into the mechanism of gene repression. We present a study comparing methylated DNA and normal DNA wrt its persistence length and contour length. Although, previous experiments and studies show no difference between the physical properties of the two, the data collected and interpreted here gives a different picture to the methylation phenomena and its effect on gene silencing. The study was extended to the artificially reconstituted …

Contributors
Kaur, Parminder, Lindsay, Stuart, Ros, Robert, et al.
Created Date
2012

A theoretical study of a three-dimensional (3D) N/S interface with arbitrary spin polarization and interface geometry is presented. The 3D model gives the same intrinsic spin polarization and superconducting gap dependence as the 1D model. This demonstrates that the 1D model can be use to t 3D data. Using this model, a Heusler alloy is investigated. Andreev reflection measurements show that the spin polarization is 80% in samples sputtered on unheated MgO(100) substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates. Ferromagnetic FexSi􀀀x alloys have been proposed as potential spin …

Contributors
Gifford, Jessica Anna, Chen, Tingyong, Bennett, Peter, et al.
Created Date
2015

Single molecule identification is one essential application area of nanotechnology. The application areas including DNA sequencing, peptide sequencing, early disease detection and other industrial applications such as quantitative and quantitative analysis of impurities, etc. The recognition tunneling technique we have developed shows that after functionalization of the probe and substrate of a conventional Scanning Tunneling Microscope with recognition molecules ("tethered molecule-pair" configuration), analyte molecules trapped in the gap that is formed by probe and substrate will bond with the reagent molecules. The stochastic bond formation/breakage fluctuations give insight into the nature of the intermolecular bonding at a single molecule-pair level. …

Contributors
Zhao, Yanan, Lindsay, Stuart, Nemanich, Robert, et al.
Created Date
2014

Urban scaling analysis has introduced a new scientific paradigm to the study of cities. With it, the notions of <italic>size</italic>, <italic>heterogeneity</italic> and <italic>structure</italic> have taken a leading role. These notions are assumed to be behind the causes for why cities differ from one another, sometimes wildly. However, the mechanisms by which size, heterogeneity and structure shape the general statistical patterns that describe urban economic output are still unclear. Given the rapid rate of urbanization around the globe, we need precise and formal mathematical understandings of these matters. In this context, I perform in this dissertation probabilistic, distributional and computational explorations …

Contributors
Gomez-Lievano, Andres, Lobo, José, Muneepeerakul, Rachata, et al.
Created Date
2014

For this project, the diffuse supernova neutrino background (DSNB) has been calculated based on the recent direct supernova rate measurements and neutrino spectrum from SN1987A. The estimated diffuse electron antineutrino flux is &sim; 0.10 &ndash; 0.59 /cm2/s at 99% confidence level, which is 5 times lower than the Super-Kamiokande 2012 upper limit of 3.0 /cm2/s, above energy threshold of 17.3 MeV. With a Megaton scale water detector, 40 events could be detected above the threshold per year. In addition, the detectability of neutrino bursts from direct black hole forming collapses (failed supernovae) at Megaton detectors is calculated. These neutrino bursts …

Contributors
Yang, Lili, Lunardini, Cecilia, Alarcon, Ricardo, et al.
Created Date
2013

Bicycles and motorcycles offer maneuverability, energy efficiency and acceleration that four wheeled vehicles cannot offer given similar budget for. Two wheeled vehicles have drastically different dynamics from four wheeled vehicles due to their instability and gyroscopic effect from their wheels. This thesis focuses on self-stabilization of a motorcycle using an active control momentum gyroscope (CMG) and validation of this multi-degree-of-freedom system’s mathematical model. Physical platform was created to mimic the simulation as accurately as possible and all components used were justified. This process involves derivation of a 3 Degree-of-Freedom (DOF) system’s forward kinematics and its Jacobian matrix, simulation analysis of …

Contributors
Moon, Hansol, Zhang, Wenlong, Frank, Daniel, et al.
Created Date
2020

Fluctuations with a power spectral density depending on frequency as $1/f^\alpha$ ($0<\alpha<2$) are found in a wide class of systems. The number of systems exhibiting $1/f$ noise means it has far-reaching practical implications; it also suggests a possibly universal explanation, or at least a set of shared properties. Given this diversity, there are numerous models of $1/f$ noise. In this dissertation, I summarize my research into models based on linking the characteristic times of fluctuations of a quantity to its multiplicity of states. With this condition satisfied, I show that a quantity will undergo $1/f$ fluctuations and exhibit associated properties, …

Contributors
Davis, Bryce, Chamberlin, Ralph V, Mauskopf, Philip, et al.
Created Date
2018

Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists. The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties …

Contributors
LeBeau, James, Bowden, Stuart, Honsberg, Christiana, et al.
Created Date
2015

Nanofluidic devices in which one single-walled carbon nanotube (SWCNT) spans a barrier between two fluid reservoirs were constructed, enabling direct electrical measurement of the transport of ions and molecules. Ion current through these devices is about 2 orders of magnitude larger than that predicted from the bulk resistivity of the electrolyte. Electroosmosis drives excess current, carried by cations, and is found to be the origin of giant ionic current through SWCNT as shown by building an ionic field-effect transistor with a gate electrode embedded in the fluid barrier. Wetting of inside of the semi-conducting SWCNT by water showed the change …

Contributors
Pang, Pei, Lindsay, Stuart, Ros, Robert, et al.
Created Date
2011

In this thesis I introduce a new direction to computing using nonlinear chaotic dynamics. The main idea is rich dynamics of a chaotic system enables us to (1) build better computers that have a flexible instruction set, and (2) carry out computation that conventional computers are not good at it. Here I start from the theory, explaining how one can build a computing logic block using a chaotic system, and then I introduce a new theoretical analysis for chaos computing. Specifically, I demonstrate how unstable periodic orbits and a model based on them explains and predicts how and how well …

Contributors
Kia, Behnam, Ditto, William, Huang, Liang, et al.
Created Date
2011

Cubic boron nitride (c-BN) has potential for electronic applications as an electron emitter and serving as a base material for diodes, transistors, etc. However, there has been limited research on c-BN reported, and many of the electronic properties of c-BN and c-BN interfaces have yet to be reported. This dissertation focused on probing thin film c-BN deposited via plasma enhanced chemical vapor deposition (PECVD) with in situ photoelectron spectroscopy (PES). PES measurements were used to characterize the electronic properties of c-BN films and interfaces with vacuum and diamond. First, the interface between c-BN and vacuum were characterized with ultraviolet PES …

Contributors
Shammas, Joseph, Nemanich, Robert J, Ponce, Fernando, et al.
Created Date
2016

Off-axis electron holography (EH) has been used to characterize electrostatic potential, active dopant concentrations and charge distribution in semiconductor nanostructures, including ZnO nanowires (NWs) and thin films, ZnTe thin films, Si NWs with axial p-n junctions, Si-Ge axial heterojunction NWs, and Ge/LixGe core/shell NW. The mean inner potential (MIP) and inelastic mean free path (IMFP) of ZnO NWs have been measured to be 15.3V±0.2V and 55±3nm, respectively, for 200keV electrons. These values were then used to characterize the thickness of a ZnO nano-sheet and gave consistent values. The MIP and IMFP for ZnTe thin films were measured to be 13.7±0.6V …

Contributors
Gan, Zhaofeng, McCartney, Martha R, Smith, David J, et al.
Created Date
2015

This dissertation research has involved microscopic characterization of magnetic nanostructures using off-axis electron holography and Lorentz microscopy. The nanostructures investigated have included Co nanoparticles (NPs), Au/Fe/GaAs shell/core nanowires (NWs), carbon spirals with magnetic cores, magnetic nanopillars, Ni-Zn-Co spinel ferrite and CoFe/Pd multilayers. The studies have confirmed the capability of holography to describe the behavior of magnetic structures at the nanoscale. The phase changes caused by the fringing fields of chains consisting of Co NPs were measured and calculated. The difference between chains with different numbers of Co NPs followed the trend indicated by calculations. Holography studies of Au/Fe/GaAs NWs grown …

Contributors
Zhang, Desai, McCartney, Martha R, Smith, David J, et al.
Created Date
2015

This work is an investigation into the information provided by the concurrent use of in situ reflection high energy electron diffraction (RHEED) and reflection electron energy loss spectroscopy (REELS). The two analytical methods were employed during growth of metal, semiconductor and superconductor thin films by molecular beam epitaxy (MBE). Surface sensitivity of the REELS spectrometer was found to be less than 1 nm for 20 KeV electrons incident at a 2 degree angle to an atomically flat film surface, agreeing with the standard electron escape depth data when adjusted incident angle. Film surface topography was found to strongly influence the …

Contributors
Strawbridge, Brett William, Newman, Nathan, Chamberlin, Ralph, et al.
Created Date
2012

Multifunctional oxide thin-films grown on silicon and several oxide substrates have been characterized using High Resolution (Scanning) Transmission Electron Microscopy (HRTEM), Energy-Dispersive X-ray Spectroscopy (EDX), and Electron Energy-Loss Spectroscopy (EELS). Oxide thin films grown on SrTiO3/Si pseudo-substrate showed the presence of amorphised SrTiO3 (STO) at the STO/Si interface. Oxide/oxide interfaces were observed to be atomically clean with very few defects. Al-doped SrTiO3 thin films grown on Si were of high crystalline quality. The Ti/O ratio estimated from EELS line scans revealed that substitution of Ti by Al created associated O vacancies. The strength of the crystal field in STO was …

Contributors
Dhamdhere, Ajit R., SMITH, DAVID J, McCartney, Martha R., et al.
Created Date
2015

Integrated oxide/semiconductor heterostructures have attracted intense interest for device applications which require sharp interfaces and controlled defects. The research of this dissertation has focused on the characterization of perovskite oxide/oxide and oxide/semiconductor heterostructures, and the analysis of interfaces and defect structures, using scanning transmission electrom microscopy (STEM) and related techniques. The SrTiO3/Si system was initially studied to develop a basic understanding of the integration of perovskite oxides with semiconductors, and successful integration with abrupt interfaces was demonstrated. Defect analysis showed no misfit dislocations but only anti-phase boundaries (APBs) in the SrTiO3 (STO) films. Similar defects were later observed in other …

Contributors
Wu, HsinWei, Smith, David J, McCartney, Martha r, et al.
Created Date
2018

This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth conditions including Ga(acac)3 precursor pulse time, O2 plasma pulse time, N2 purge time and deposition temperature were investigated and optimized on phosphorus doped Si (100) wafer to achieve a saturated self-limiting growth. A temperature growth window was observed between 150 ℃ and 320 ℃. Ga precursor molecules can saturate on the substrate surface in 0.6 s in one cycle …

Contributors
Hao, Mei, Nemanich, Robert J., Ponce, Fernando, et al.
Created Date
2018

The work contained in this dissertation is focused on the structural and optical properties of III-V semiconductor structures for solar cell applications. By using transmission electron microscopy, many of their structural properties have been investigated, including morphology, defects, and strain relaxation. The optical properties of the semiconductor structures have been studied by photoluminescence and cathodoluminescence. Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the …

Contributors
Xie, Hongen, Ponce, Fernando A, Crozier, Peter A, et al.
Created Date
2016

Optoelectronic and microelectronic applications of germanium-based materials have received considerable research interest in recent years. A novel method for Ge on Si heteroepitaxy required for such applications was developed via molecular epitaxy of Ge5H12. Next, As(GeH3)3, As(SiH3)3, SbD3, S(GeH3)2 and S(SiH3)2 molecular sources were utilized in degenerate n-type doping of Ge. The epitaxial Ge films produced in this work incorporate donor atoms at concentrations above the thermodynamic equilibrium limits. The donors are nearly fully activated, and led to films with lowest resistivity values thus far reported. Band engineering of Ge was achieved by alloying with Sn. Epitaxy of the alloy …

Contributors
Senaratne, Charutha Lasitha, Kouvetakis, John, Chizmeshya, Andrew, et al.
Created Date
2016