ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at firstname.lastname@example.org.
- 3 English
- 3 Public
- Materials Science
- 2 Electrical engineering
- 2 Programmable Metallization Cell
- 1 CBRAM
- 1 Chalcogenide
- 1 Condensed matter physics
- 1 Dendrite
- 1 Diffusion Limited Aggregation
- 1 Flash
- 1 Fractal
- 1 Nanoscience
- 1 Nanotechnology
- 1 Non-volatile Memory
- 1 PMC
- 1 Physical Unclonable Function
- 1 Programmable metallization cell
- 1 Radiation Environment
- 1 Resistive Memory
- 1 Solid-state
- 1 impedance
- 1 memory
- 1 modelling
Counterfeiting of goods is a widespread epidemic that is affecting the world economy. The conventional labeling techniques are proving inadequate to thwart determined counterfeiters equipped with sophisticated technologies. There is a growing need of a secure labeling that is easy to manufacture and analyze but extremely difficult to copy. Programmable metallization cell technology operates on a principle of controllable reduction of a metal ions to an electrodeposit in a solid electrolyte by application of bias. The nature of metallic electrodeposit is unique for each instance of growth, moreover it has a treelike, bifurcating fractal structure with high information capacity. These …
- Chamele, Ninad, Kozicki, Michael, Barnaby, Hugh, et al.
- Created Date
Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they …
- Taggart, Jennifer Lynn, Barnaby, Hugh, Kozicki, Michael, et al.
- Created Date
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC …
- Rajabi, Saba, Barnaby, Hugh, Kozicki, Michael, et al.
- Created Date