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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Subject
Date Range
2012 2019


The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation based NQS MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static (QS) description of the MOSFET. The model is implemented in two widely used circuit simulators and tested for speed and convergence. It …

Contributors
Zhu, Zeqin, Gildenblat, Gennady, Bakkaloglu, Bertan, et al.
Created Date
2012

In today's world there is a great need for sensing methods as tools to provide critical information to solve today's problems in security applications. Real time detection of trace chemicals, such as explosives, in a complex environment containing various interferents using a portable device that can be reliably deployed in a field has been a difficult challenge. A hybrid nanosensor based on the electrochemical reduction of trinitrotoluene (TNT) and the interaction of the reduction products with conducting polymer nanojunctions in an ionic liquid was fabricated. The sensor simultaneously measures the electrochemical current from the reduction of TNT and the conductance …

Contributors
Diaz Aguilar, Alvaro, Tao, Nongjian, Tsui, Raymond, et al.
Created Date
2012

During the last decades the development of the transistor and its continuous down-scaling allowed the appearance of cost effective wireless communication systems. New generation wideband wireless mobile systems demand high linearity, low power consumption and the low cost devices. Traditional RF systems are mainly analog-based circuitry. Contrary to digital circuits, the technology scaling results in reduction on the maximum voltage swing which makes RF design very challenging. Pushing the interface between the digital and analog boundary of the RF systems closer to the antenna becomes an attractive trend for modern RF devices. In order to take full advantages of the …

Contributors
Han, Yongping, Kiaei, Sayfe, Yu, Hongyu, et al.
Created Date
2012

The front end of almost all ADCs consists of a Sample and Hold Circuit in order to make sure a constant analog value is digitized at the end of ADC. The design of Track and Hold Circuit (THA) mainly focuses on following parameters: Input frequency, Sampling frequency, dynamic Range, hold pedestal, feed through error. This thesis will discuss the importance of these parameters of a THA to the ADCs and commonly used architectures of THA. A new architecture with SiGe HBT transistors in BiCMOS 130 nm technology is presented here. The proposed topology without complicated circuitry achieves high Spurious Free …

Contributors
Ramakrishna Rao, Nishita Ramakrishna, Barnaby, Hugh, Bakkaloglu, Bertan, et al.
Created Date
2012

Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors. The new model, SP-HV, is constructed from a surface-potential-based bulk MOSFET model, PSP, and a nonlinear resistor model, R3. The use of independently verified and mature sub-models leads to increased …

Contributors
Yao, Wei, Gildenblat, Gennady, Barnaby, Hugh, et al.
Created Date
2012

ABSTRACT As the technology length shrinks down, achieving higher gain is becoming very difficult in deep sub-micron technologies. As the supply voltages drop, cascodes are very difficult to implement and cascade amplifiers are needed to achieve sufficient gain with required output swing. This sets the fundamental limit on the SNR and hence the maximum resolution that can be achieved by ADC. With the RSD algorithm and the range overlap, the sub ADC can tolerate large comparator offsets leaving the linearity and accuracy requirement for the DAC and residue gain stage. Typically, the multiplying DAC requires high gain wide bandwidth op-amp …

Contributors
Swaminathan, Visu Vaithiyanathan, Barnaby, Hugh, Bakkaloglu, Bertan, et al.
Created Date
2012

Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric …

Contributors
Dessai, Gajanan, Gildenblat, Gennady, Gildenblat, Gennady, et al.
Created Date
2012

A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The …

Contributors
Hindman, Nathan David, Clark, Lawrence T, Holbert, Keith, et al.
Created Date
2012

The dissolution of metal layers such as silver into chalcogenide glass layers such as germanium selenide changes the resistivity of the metal and chalcogenide films by a great extent. It is known that the incorporation of the metal can be achieved by ultra violet light exposure or thermal processes. In this work, the use of metal dissolution by exposure to gamma radiation has been explored for radiation sensor applications. Test structures were designed and a process flow was developed for prototype sensor fabrication. The test structures were designed such that sensitivity to radiation could be studied. The focus is on …

Contributors
Chandran, Ankitha, Kozicki, Michael N, Holbert, Keith, et al.
Created Date
2012

The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, …

Contributors
Stevens, Mark A., Kiaei, Sayfe, Bakkaloglu, Bertan, et al.
Created Date
2012