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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


The Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology because of its attractive attributes, including excellent scalability (< 10 nm), low programming voltage (< 3 V), fast switching speed (< 10 ns), high OFF/ON ratio (> 10), good endurance (up to 1012 cycles) and great compatibility with silicon CMOS technology [1]. However, ReRAM suffers from larger write latency, energy and reliability issue compared to Dynamic Random Access Memory (DRAM). To improve the energy-efficiency, latency efficiency and reliability of ReRAM storage systems, a low cost cross-layer approach that spans device, circuit, architecture and system levels is proposed. For …

Contributors
Mao, Manqing, Chakrabariti, Chaitali, Yu, Shimeng, et al.
Created Date
2019