Skip to main content

ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.




The study of soft magnetic materials has been growing in popularity in recent years. Driving this interest are new applications for traditional electrical power-management components, such as inductors and transformers, which must be scaled down to the micro and nano scale while the frequencies of operation have been scaling up to the gigahertz range and beyond. The exceptional magnetic properties of the materials make them highly effective in these small-component applications, but the ability of these materials to provide highly-effective shielding has not been so thoroughly considered. Most shielding is done with traditional metals, such as aluminum, because of the …

Contributors
Miller, Phillip Carl, Yu, Hongbin, Aberle, James, et al.
Created Date
2019

This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A …

Contributors
Li, Debin, Ning, Cun-Zheng, Zhang, Yong-Hang, et al.
Created Date
2012

To date, the most popular and dominant material for commercial solar cells is crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out of all commercial solar cells. Although the potential of crystalline-Si solar cells in supplying energy demands is enormous, their future growth will likely be constrained by two major bottlenecks. The first is the high electricity input to produce crystalline-Si solar cells and modules, and the second is the limited supply of silver (Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching terawatt-scale deployment, which means the electricity produced by crystalline-Si solar cells …

Contributors
Sun, Wen-Cheng, Tao, Meng, Vasileska, Dragica, et al.
Created Date
2016

Characterization of standard cells is one of the crucial steps in the IC design. Scaling of CMOS technology has lead to timing un-certainties such as that of cross coupling noise due to interconnect parasitic, skew variation due to voltage jitter and proximity effect of multiple inputs switching (MIS). Due to increased operating frequency and process variation, the probability of MIS occurrence and setup / hold failure within a clock cycle is high. The delay variation due to temporal proximity of MIS is significant for multiple input gates in the standard cell library. The shortest paths are affected by MIS due …

Contributors
Subramaniam, Anupama R., Cao, Yu, Chakrabarti, Chaitali, et al.
Created Date
2012

The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials. This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar …

Contributors
Hashemi Amiri, Seyed Ebrahim, Ning, Cun-Zheng, Petuskey, William, et al.
Created Date
2018

Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially …

Contributors
Fan, Jin, Zhang, Yong-Hang, Smith, David, et al.
Created Date
2012

Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical …

Contributors
Sun, Minghua, Ning, Cun-Zheng, Yu, Hongbin, et al.
Created Date
2011

The coexistence of superconductivity and ferromagnetic orders has been the subject of study for many years. It well known that these materials possess two competing order parameters; however the two order parameters can coexist under special circumstances inducing interesting physical phenomena. In recent years the demand of ultra-low-power, high density cryogenic memories has brought considerable interest to integrate superconducting and magnetic thin films in one structure to produce novel memory elements. The operation of the device depends on the unusual electronic properties associated with the Superconductor (S) /Ferromagnetic (F) proximity effect. Niobium (Nb) based Josephson junction devices were fabricated with …

Contributors
Abd El Qader, Makram, Newman, Nathan, Rowell, John, et al.
Created Date
2016

Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D) nanowires can have different electronic properties for potential novel applications. In this work, we present the study of ZnTe nanowires (NWs) that are synthesized through a simple vapor-liquid-solid (VLS) method. By controlling the presence or the absence of Au catalysts and controlling the growth parameters such as growth temperature, various growth morphologies of ZnTe, such as thin films and nanowires can be obtained. The characterization …

Contributors
Peng, Jhih-Hong, Yu, Hongbin, Roedel, Ronald, et al.
Created Date
2017