ASU Electronic Theses and Dissertations
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Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D) nanowires can have different electronic properties for potential novel applications. In this work, we present the study of ZnTe nanowires (NWs) that are synthesized through a simple vapor-liquid-solid (VLS) method. By controlling the presence or the absence of Au catalysts and controlling the growth parameters such as growth temperature, various growth morphologies of ZnTe, such as thin films and nanowires can be obtained. The characterization …
- Peng, Jhih-Hong, Yu, Hongbin, Roedel, Ronald, et al.
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Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially …
- Fan, Jin, Zhang, Yong-Hang, Smith, David, et al.
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