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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Language
  • English
Subject
Date Range
2010 2019


The object of this body of work is to study the properties and suitability of zinc oxide thin films with a view to engineering them for optoelectronics applications, making them a cheap and effective alternative to indium tin oxide (ITO), the most used transparent conducting oxides in the industry. Initially, a study was undertaken to examine the behavior of silver contacts to ZnO and ITO during thermal processing, a step frequently used in materials processing in optoelectronics. The second study involved an attempt to improve the conductivity of ZnO films by inserting a thin copper layer between two ZnO layers. …

Contributors
Sivaramakrishnan, Karthik, Alford, Terry L, Schroder, Dieter K, et al.
Created Date
2010

The research of this dissertation has involved the nanoscale quantitative characterization of patterned magnetic nanostructures and devices using off-axis electron holography and Lorentz microscopy. The investigation focused on different materials of interest, including monolayer Co nanorings, multilayer Co/Cu/Py (Permalloy, Ni81Fe19) spin-valve nanorings, and notched Py nanowires, which were fabricated via a standard electron-beam lithography (EBL) and lift-off process. Magnetization configurations and reversal processes of Co nanorings, with and without slots, were observed. Vortex-controlled switching behavior with stepped hysteresis loops was identified, with clearly defined onion states, vortex states, flux-closure (FC) states, and Omega states. Two distinct switching mechanisms for the …

Contributors
He, Kai, Mccartney, Martha R., Smith, David J., et al.
Created Date
2010

As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, …

Contributors
Wu, Songnan, Zhang, Yong-Hang, Menendez, Jose, et al.
Created Date
2010

This study analyzes the thermoelectric phenomena of nanoparticle suspensions, which are composed of liquid and solid nanoparticles that show a relatively stable Seebeck coefficient as bulk solids near room temperature. The approach is to explore the thermoelectric character of the nanoparticle suspensions, predict the outcome of the experiment and compare the experimental data with anticipated results. In the experiment, the nanoparticle suspension is contained in a 15cm*2.5cm*2.5cm glass container, the temperature gradient ranges from 20 °C to 60 °C, and room temperature fluctuates from 20 °C to 23°C. The measured nanoparticles include multiwall carbon nanotubes, aluminum dioxide and bismuth telluride. …

Contributors
Zhu, Moxuan, Phelan, Patrick, Trimble, Steven, et al.
Created Date
2010

Miedema's plot is used to select the Cu/metal barrier for Cu metallization.The Cu/metal barrier system selected should have positive heat of formation (Hf) so that there is no intermixing between the two layers. In this case, Ru is chosen as a potential candidate, and then the barrier properties of sputtered Cu/Ru thin films on thermally grown SiO2 substrates are investigated by Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), and electrical resistivity measurement. The Cu/Ru/SiO2 samples are analyzed prior to and after vacuum annealing at various temperatures of 400, 500, and 600 oC and at different interval of times of 0.5, …

Contributors
Venkatesh, Srilakshmi Hosadurga, Alford, Terry L, Krause, Stephen, et al.
Created Date
2010

Owing to their special characteristics, group III-Nitride semiconductors have attracted special attention for their application in a wide range of optoelectronic devices. Of particular interest are their direct and wide band gaps that span from ultraviolet to the infrared wavelengths. In addition, their stronger bonds relative to the other compound semiconductors makes them thermally more stable, which provides devices with longer life time. However, the lattice mismatch between these semiconductors and their substrates cause the as-grown films to have high dislocation densities, reducing the life time of devices that contain these materials. One possible solution for this problem is to …

Contributors
Diaz Rivas, Rosa Estela, Mahajan, Subhash, Petuskey, William, et al.
Created Date
2010

The discovery of the superconductor MgB2 led to the increase of research activity for more compounds adopting the AlB2 structure type and containing superconductive properties. The prominent successor compounds were the silicide systems, AeAlSi (Ae=Sr, Ba, Ca). Presented here is an extension of this investigation to the germanides, SrAlGe and BaAlGe. The ternary structures were synthesized through arc-melting elemental stoichiometric mixtures and structurally characterized by x-ray powder diffraction. Both crystallize as the hexagonal SrPtSb structure type, a variant of the AlB2 structure type. The low temperature region was measured on a Vibrating Sample Magnetometer (VSM) and both present the onset …

Contributors
Kranak, Verina Franika, Haussermann, Ulrich, Seo, Dong Kyun, et al.
Created Date
2011

The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (polyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (~ 88 %), resistivity (~ 2.7 × 10-5 µ-cm.) and has the best Hackee figure …

Contributors
Indluru, Anil Reddy, Alford, Terry L, Schroder, Dieter, et al.
Created Date
2011

Transparent conductive oxides (TCOs) are used as electrodes for a number of optoelectronic devices including solar cells. Because of its superior transparent and conductive properties, indium (In) tin (Sn) oxide (ITO) has long been at the forefront for TCO research activities and high-volume product applications. However, given the limited supply of In and potential toxicity of Sn-based compounds, attention has shifted to alternative TCOs like ZnO doped with group-III elements such as Ga and Al. Employing a variety of deposition techniques, many research groups are striving to achieve resistivities below 1E-4 ohm-cm with transmittance approaching the theoretical limit over a …

Contributors
Scott, Robin Charis, Zhang, Yong Hang, Alford, Terry, et al.
Created Date
2011

Programmable Metallization Cell (PMC) is a resistance-switching device based on migration of nanoscale quantities of cations in a solid electrolyte and formation of a conducting electrodeposit by the reductions of these cations. This dissertation presents electrical characterization results on Cu-SiO2 based PMC devices, which due to the na- ture of materials can be easily integrated into the current Complimentary metal oxide semiconductor (CMOS) process line. Device structures representing individual mem- ory cells based on W bottom electrode and n-type Si bottom electrode were fabricated for characterization. For the W bottom electrode based devices, switching was ob- served for voltages in …

Contributors
Puthenthermadam, Sarath, Kozicki, Michael N, Diaz, Rodolfo, et al.
Created Date
2011