Skip to main content

ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Language
  • English
Resource Type
  • Masters Thesis
Date Range
2010 2019


Amorphous materials can be uniformly deposited over a large area at lower cost compared to crystalline semiconductors (Silicon or Germanium). This property along with its high resistivity and wide band-gap found many applications in devices like rectifiers, xerography, xero-radiography, ultrahigh sensitivity optical cameras, digital radiography, and mammography (2D and 3D tomosynthesis). Amorphous selenium is the only amorphous material that undergoes impact ionization where only holes avalanche at high electric fields. This leads to a small excess noise factor which is a very important performance comparison matrix for avalanche photodetectors. Thus, there is a need to model high field avalanche process …

Contributors
Mukherjee, Atreyo, Vasileska, Dragica, Goldan, Amirhossein, et al.
Created Date
2017

From 2D planar MOSFET to 3D FinFET, the geometry of semiconductor devices is getting more and more complex. Correspondingly, the number of mesh grid points increases largely to maintain the accuracy of carrier transport and heat transfer simulations. By substituting the conventional uniform mesh with non-uniform mesh, one can reduce the number of grid points. However, the problem of how to solve governing equations on non-uniform mesh is then imposed to the numerical solver. Moreover, if a device simulator is integrated into a multi-scale simulator, the problem size will be further increased. Consequently, there exist two challenges for the current …

Contributors
Guo, Xinchen, Vasileska, Dragica, Goodnick, Stephen, et al.
Created Date
2015

A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic devices that take advantage of the nearly continuous bandgap availability between 0 eV and 3.4 eV. These devices include multijunction solar cells and multicolor detectors. The MBE system upgrade involved the conversion of a former III-V chamber for II-VI growth. This required intensive cleaning of the chamber and components to prevent contamination. Special features including valved II-VI sources and the addition of a cold trap allowed for the full system …

Contributors
Dettlaff, William Henry Gerald, Zhang, Yong-Hang, Vasileska, Dragica, et al.
Created Date
2012

The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the …

Contributors
Qazi, Suleman Sami, Vasileska, Dragica, Goodnick, Stephen, et al.
Created Date
2013

Moore's law has been the most important driving force for the tremendous progress of semiconductor industry. With time the transistors which form the fundamental building block of any integrated circuit have been shrinking in size leading to smaller and faster electronic devices.As the devices scale down thermal effects and the short channel effects become the important deciding factors in determining transistor architecture.SOI (Silicon on Insulator) devices have been excellent alternative to planar MOSFET for ultimate CMOS scaling since they mitigate short channel effects. Hence as a part of thesis we tried to study the benefits of the SOI technology especially …

Contributors
Laturia, Akash, Vasileska, Dragica, Ferry, David, et al.
Created Date
2016

In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be …

Contributors
Hathwar, Raghuraj, Vasileska, Dragica, Goodnick, Stephen M, et al.
Created Date
2011

Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface. In this work, a new technique for grain boundary passivation for multicrystalline …

Contributors
Saha, Arunodoy, Tao, Meng, Vasileska, Dragica, et al.
Created Date
2014

Light Emitting Diodes even with their longer life, robust build and low power consumption, they are still plagued by some problems the most significant of which are the current droop and thermal droop. Current droop causes a lowering in the Internal Quantum Efficiency with increased current injection while thermal droop lowers the whole Internal Quantum Efficiency curve with increase in temperature. The focus here was understanding effects of thermal droop and develop a method to control it. Shockley Read Hall recombination plays a dominant role in the thermal droop effect when the current injection is low. Since the blue light …

Contributors
Das, Shiladitya, Zhao, Yuji, Vasileska, Dragica, et al.
Created Date
2017

There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows …

Contributors
Sochacki, John J., Thornton, Trevor J, Schroder, Dieter, et al.
Created Date
2011

Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed …

Contributors
Kumar, Viswanathan Naveen, Vasileska, Dragica, Goodnick, Stephen, et al.
Created Date
2017