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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature. Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and …

Contributors
Zhao, Shirong, Chowdhury, Srabanti, Goodnick, Stephen, et al.
Created Date
2016

In recent years, there has been increased interest in the Indium Gallium Nitride (InGaN) material system for photovoltaic (PV) applications. The InGaN alloy system has demonstrated high performance for high frequency power devices, as well as for optical light emitters. This material system is also promising for photovoltaic applications due to broad range of bandgaps of InxGa1-xN alloys from 0.65 eV (InN) to 3.42 eV (GaN), which covers most of the electromagnetic spectrum from ultraviolet to infrared wavelengths. InGaN’s high absorption coefficient, radiation resistance and thermal stability (operating with temperature > 450 ℃) makes it a suitable PV candidate for …

Contributors
Fang, Yi, Vasileska, Dragica, Goodnick, Stephen, et al.
Created Date
2017