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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


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Date Range
2011 2019


Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. …

Contributors
Lee, Junghan, Bakkaloglu, Bertan, Kiaei, Sayfe, et al.
Created Date
2011

ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF …

Contributors
Sreenivassan, Aiswariya, Ozev, Sule, Kiaei, Sayfe, et al.
Created Date
2011

This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A …

Contributors
Li, Debin, Ning, Cun-Zheng, Zhang, Yong-Hang, et al.
Created Date
2012

Photovoltaics (PV) is an important and rapidly growing area of research. With the advent of power system monitoring and communication technology collectively known as the "smart grid," an opportunity exists to apply signal processing techniques to monitoring and control of PV arrays. In this paper a monitoring system which provides real-time measurements of each PV module's voltage and current is considered. A fault detection algorithm formulated as a clustering problem and addressed using the robust minimum covariance determinant (MCD) estimator is described; its performance on simulated instances of arc and ground faults is evaluated. The algorithm is found to perform …

Contributors
Braun, Henry Carlton, Tepedelenlioglu, Cihan, Spanias, Andreas, et al.
Created Date
2012

This work demonstrates the integration of a wearable particulate detector and a wireless chemical sensor into a single portable system. The detection philosophy of the chemical sensor is based on highly selective and sensitive microfabricated quartz tuning fork arrays and the particle detector detects the particulate level in real-time using a nephelometric (light scattering) approach. The device integration is realized by carefully evaluating the needs of flow rate, power and data collection. Validation test has been carried out in both laboratory and in field trials such as parking structures and highway exits with high and low traffic emissions. The integrated …

Contributors
Gao, Tianle, Tao, Nongjian, Chae, Junseok, et al.
Created Date
2012

This thesis discusses the evolution of conduction mechanism in the silver (Ag) on zinc oxide (ZnO) thin film system with respect to the Ag morphology. As a plausible substitute for indium tin oxide (ITO), TCO/Metal/TCO (TMT) structure has received a lot of attentions as a prospective ITO substitute due to its low resistivity and desirable transmittance. However, the detailed conduction mechanism is not fully understood. In an attempt to investigate the conduction mechanism of the ZnO/Ag/ZnO thin film system with respect to the Ag microstructure, the top ZnO layer is removed, which offers a better view of Ag morphology by …

Contributors
Zhang, Shengke, Alford, Terry L, Schroder, Dieter K, et al.
Created Date
2012

The Smart Grid initiative describes the collaborative effort to modernize the U.S. electric power infrastructure. Modernization efforts incorporate digital data and information technology to effectuate control, enhance reliability, encourage small customer sited distributed generation (DG), and better utilize assets. The Smart Grid environment is envisioned to include distributed generation, flexible and controllable loads, bidirectional communications using smart meters and other technologies. Sensory technology may be utilized as a tool that enhances operation including operation of the distribution system. Addressing this point, a distribution system state estimation algorithm is developed in this thesis. The state estimation algorithm developed here utilizes distribution …

Contributors
Haughton, Daniel Andrew, Heydt, Gerald T, Vittal, Vijay, et al.
Created Date
2012

Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric …

Contributors
Dessai, Gajanan, Gildenblat, Gennady, Gildenblat, Gennady, et al.
Created Date
2012

Characterization of standard cells is one of the crucial steps in the IC design. Scaling of CMOS technology has lead to timing un-certainties such as that of cross coupling noise due to interconnect parasitic, skew variation due to voltage jitter and proximity effect of multiple inputs switching (MIS). Due to increased operating frequency and process variation, the probability of MIS occurrence and setup / hold failure within a clock cycle is high. The delay variation due to temporal proximity of MIS is significant for multiple input gates in the standard cell library. The shortest paths are affected by MIS due …

Contributors
Subramaniam, Anupama R., Cao, Yu, Chakrabarti, Chaitali, et al.
Created Date
2012

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of …

Contributors
Chen, Bo, Thornton, Trevor, Bakkaloglu, Bertan, et al.
Created Date
2013