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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


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Date Range
2011 2019


Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric …

Contributors
Dessai, Gajanan, Gildenblat, Gennady, Gildenblat, Gennady, et al.
Created Date
2012

This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A …

Contributors
Li, Debin, Ning, Cun-Zheng, Zhang, Yong-Hang, et al.
Created Date
2012

Several music players have evolved in multi-dimensional and surround sound systems. The audio players are implemented as software applications for different audio hardware systems. Digital formats and wireless networks allow for audio content to be readily accessible on smart networked devices. Therefore, different audio output platforms ranging from multispeaker high-end surround systems to single unit Bluetooth speakers have been developed. A large body of research has been carried out in audio processing, beamforming, sound fields etc. and new formats are developed to create realistic audio experiences. An emerging trend is seen towards high definition AV systems, virtual reality gears as …

Contributors
Dharmadhikari, Chinmay Nrusinha, Spanias, Andreas, Turaga, Pavan, et al.
Created Date
2016

Characterization of standard cells is one of the crucial steps in the IC design. Scaling of CMOS technology has lead to timing un-certainties such as that of cross coupling noise due to interconnect parasitic, skew variation due to voltage jitter and proximity effect of multiple inputs switching (MIS). Due to increased operating frequency and process variation, the probability of MIS occurrence and setup / hold failure within a clock cycle is high. The delay variation due to temporal proximity of MIS is significant for multiple input gates in the standard cell library. The shortest paths are affected by MIS due …

Contributors
Subramaniam, Anupama R., Cao, Yu, Chakrabarti, Chaitali, et al.
Created Date
2012

In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real time model for market operations and other critical analysis functions in the EMS. Tradi-tionally, SE is run with data obtained only from supervisory control and data acquisition (SCADA) devices and systems. However, more emphasis on improving the performance of SE drives the inclusion of phasor measurement units (PMUs) into SE …

Contributors
Murugesan, Veerakumar, Vittal, Vijay, Heydt, Gerald, et al.
Created Date
2013

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of …

Contributors
Chen, Bo, Thornton, Trevor, Bakkaloglu, Bertan, et al.
Created Date
2013

ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF …

Contributors
Sreenivassan, Aiswariya, Ozev, Sule, Kiaei, Sayfe, et al.
Created Date
2011

Horn antennas have been used for over a hundred years. They have a wide variety of uses where they are a basic and popular microwave antenna for many practical applications, such as feed elements for communication reflector dishes on satellite or point-to-point relay antennas. They are also widely utilized as gain standards for calibration and gain measurement of other antennas. The gain and loss factor of conical horns are revisited in this dissertation based on spherical and quadratic aperture phase distributions. The gain is compared with published classical data in an attempt to confirm their validity and accuracy and to …

Contributors
Aboserwal, Nafati, Balanis, Constantine A, Aberle, James T, et al.
Created Date
2014

This work implements three switched mode power amplifier topologies namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The presented power amplifiers address practical implementation design constraints and explore the fundamental performance limitations of switched-mode power amplifiers for cellular band. The designs are analyzed and compared with respect to non-idealities like finite on-resistance, finite-Q of inductors, bond-wire effects, input signal duty cycle, and supply and component variations. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergo …

Contributors
Shukla, Shishir Ramasare, Kitchen, Jennifer N, Bakkaloglu, Bertan, et al.
Created Date
2015

Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface. In this work, a new technique for grain boundary passivation for multicrystalline …

Contributors
Saha, Arunodoy, Tao, Meng, Vasileska, Dragica, et al.
Created Date
2014