ASU Electronic Theses and Dissertations
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Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface. In this work, a new technique for grain boundary passivation for multicrystalline …
- Saha, Arunodoy, Tao, Meng, Vasileska, Dragica, et al.
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