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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Contributor
Date Range
2010 2019


In this thesis two methodologies have been proposed for evaluating the fault response of analog/RF circuits. These proposed approaches are used to evaluate the response of the faulty circuit in terms of specifications/measurements. Faulty response can be used to evaluate important test metrics like fail probability, fault coverage and yield coverage of given measurements under process variations. Once the models for faulty and fault free circuit are generated, one needs to perform Monte Carlo sampling (as opposed to Monte Carlo simulations) to compute these statistical parameters with high accuracy. The first method is based on adaptively determining the order of …

Contributors
Subrahmaniyan Radhakrishnan, Gurusubrahmaniyan, Ozev, Sule, Blain Christen, Jennifer, et al.
Created Date
2010

To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact on leading products, advanced circuit design exploration must begin concurrently with early silicon development. Therefore, an accurate and scalable model is desired to correctly capture those effects and flexible to extend to alternative process choices. For example, strain technology has been successfully integrated into CMOS fabrication to improve transistor performance …

Contributors
Wang, Chi-Chao, Cao, Yu, Chakrabarti, Chaitali, et al.
Created Date
2011

Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are important reliability issues impacting analog circuit performance and lifetime. Compact reliability models and efficient simulation methods are essential for circuit level reliability prediction. This work proposes a set of compact models of NBTI and CHC effects for analog and mixed-signal circuit, and a direct prediction method which is different from conventional simulation methods. This method is applied in circuit benchmarks and evaluated. This work helps with improving efficiency and accuracy of circuit aging prediction. Dissertation/Thesis

Contributors
Zheng, Rui, Cao, Yu, Yu, Hongyu, et al.
Created Date
2011

CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on …

Contributors
Ye, Yun, Cao, Yu, Yu, Hongbin, et al.
Created Date
2011

Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design. To improve robustness, efficient methodology is required that considers effect of variations in the design flow. Analyzing timing variability of complex circuits with HSPICE simulations is very time consuming. This thesis proposes an analytical model to predict variability in CMOS circuits that is quick and accurate. There are several analytical models to estimate …

Contributors
Gummalla, Samatha, Chakrabarti, Chaitali, Cao, Yu, et al.
Created Date
2011

Redundant Binary (RBR) number representations have been extensively used in the past for high-throughput Digital Signal Processing (DSP) systems. Data-path components based on this number system have smaller critical path delay but larger area compared to conventional two's complement systems. This work explores the use of RBR number representation for implementing high-throughput DSP systems that are also energy-efficient. Data-path components such as adders and multipliers are evaluated with respect to critical path delay, energy and Energy-Delay Product (EDP). A new design for a RBR adder with very good EDP performance has been proposed. The corresponding RBR parallel adder has a …

Contributors
Mahadevan, Rupa, Chakrabarti, Chaitali, Kiaei, Sayfe, et al.
Created Date
2011

The first part describes Metal Semiconductor Field Effect Transistor (MESFET) based fundamental analog building blocks designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. DC characteristics were measured by varying the power supply from 2.5V to 5.5V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within ±15% for the current from 0 to 1.5mA with the power supply from 2.5 to 5.5V. The second part presents a low-power …

Contributors
Kim, Sung Ho, Bakkaloglu, Bertan, Christen, Jennifer Blain, et al.
Created Date
2011

Micro-electro-mechanical systems (MEMS) film bulk acoustic resonator (FBAR) demonstrates label-free biosensing capabilities and is considered to be a promising alternative of quartz crystal microbalance (QCM). FBARs achieve great success in vacuum, or in the air, but find limited applications in liquid media because squeeze damping significantly degrades quality factor (Q) and results in poor frequency resolution. A transmission-line model shows that by confining the liquid in a thickness comparable to the acoustic wavelength of the resonator, Q can be considerably improved. The devices exhibit damped oscillatory patterns of Q as the liquid thickness varies. Q assumes its maxima and minima …

Contributors
Xu, Wencheng, Chae, Junseok, Phillips, Stephen, et al.
Created Date
2011

A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore …

Contributors
Sinha, Saurabh, Cao, Yu, Bakkaloglu, Bertan, et al.
Created Date
2011

Current sensing ability is one of the most desirable features of contemporary current or voltage mode controlled DC-DC converters. Current sensing can be used for over load protection, multi-stage converter load balancing, current-mode control, multi-phase converter current-sharing, load independent control, power efficiency improvement etc. There are handful existing approaches for current sensing such as external resistor sensing, triode mode current mirroring, observer sensing, Hall-Effect sensors, transformers, DC Resistance (DCR) sensing, Gm-C filter sensing etc. However, each method has one or more issues that prevent them from being successfully applied in DC-DC converter, e.g. low accuracy, discontinuous sensing nature, high sensitivity …

Contributors
Liu, Tao, Bakkaloglu, Bertan, Bakkaloglu, Bertan, et al.
Created Date
2011

During the past decade, different kinds of fancy functions are developed in portable electronic devices. This trend triggers the research of how to enhance battery lifetime to meet the requirement of fast growing demand of power in portable devices. DC-DC converter is the connection configuration between the battery and the functional circuitry. A good design of DC-DC converter will maximize the power efficiency and stabilize the power supply of following stages. As the representative of the DC-DC converter, Buck converter, which is a step down DC-DC converter that the output voltage level is smaller than the input voltage level, is …

Contributors
Fu, Chao, Bakkaloglu, Bertan, Cao, Yu, et al.
Created Date
2011

Multidimensional (MD) discrete Fourier transform (DFT) is a key kernel algorithm in many signal processing applications, such as radar imaging and medical imaging. Traditionally, a two-dimensional (2-D) DFT is computed using Row-Column (RC) decomposition, where one-dimensional (1-D) DFTs are computed along the rows followed by 1-D DFTs along the columns. However, architectures based on RC decomposition are not efficient for large input size data which have to be stored in external memories based Synchronous Dynamic RAM (SDRAM). In this dissertation, first an efficient architecture to implement 2-D DFT for large-sized input data is proposed. This architecture achieves very high throughput …

Contributors
Yu, Chi-Li, Chakrabarti, Chaitali, Papandreou-Suppappola, Antonia, et al.
Created Date
2012

Semiconductor scaling technology has led to a sharp growth in transistor counts. This has resulted in an exponential increase on both power dissipation and heat flux (or power density) in modern microprocessors. These microprocessors are integrated as the major components in many modern embedded devices, which offer richer features and attain higher performance than ever before. Therefore, power and thermal management have become the significant design considerations for modern embedded devices. Dynamic voltage/frequency scaling (DVFS) and dynamic power management (DPM) are two well-known hardware capabilities offered by modern embedded processors. However, the power or thermal aware performance optimization is not …

Contributors
Zhang, Sushu, Chatha, Karam S, Cao, Yu, et al.
Created Date
2012

Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors. The new model, SP-HV, is constructed from a surface-potential-based bulk MOSFET model, PSP, and a nonlinear resistor model, R3. The use of independently verified and mature sub-models leads to increased …

Contributors
Yao, Wei, Gildenblat, Gennady, Barnaby, Hugh, et al.
Created Date
2012

Built-in-Self-Test (BiST) for transmitters is a desirable choice since it eliminates the reliance on expensive instrumentation to do RF signal analysis. Existing on-chip resources, such as power or envelope detectors, or small additional circuitry can be used for BiST purposes. However, due to limited bandwidth, measurement of complex specifications, such as IQ imbalance, is challenging. In this work, a BiST technique to compute transmitter IQ imbalances using measurements out of a self-mixing envelope detector is proposed. Both the linear and non linear parameters of the RF transmitter path are extracted successfully. We first derive an analytical expression for the output …

Contributors
Byregowda, Srinath, Ozev, Sule, Cao, Yu, et al.
Created Date
2012

Today's mobile devices have to support computation-intensive multimedia applications with a limited energy budget. In this dissertation, we present architecture level and algorithm-level techniques that reduce energy consumption of these devices with minimal impact on system quality. First, we present novel techniques to mitigate the effects of SRAM memory failures in JPEG2000 implementations operating in scaled voltages. We investigate error control coding schemes and propose an unequal error protection scheme tailored for JPEG2000 that reduces overhead without affecting the performance. Furthermore, we propose algorithm-specific techniques for error compensation that exploit the fact that in JPEG2000 the discrete wavelet transform outputs …

Contributors
Emre, Yunus, Chakrabarti, Chaitali, Bakkaloglu, Bertan, et al.
Created Date
2012

Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at …

Contributors
Xavier, Jerin, Clark, Lawrence T, Cao, Yu, et al.
Created Date
2012

Negative bias temperature instability (NBTI) is a leading aging mechanism in modern digital and analog circuits. Recent NBTI data exhibits an excessive amount of randomness and fast recovery, which are difficult to be handled by conventional power-law model (tn). Such discrepancies further pose the challenge on long-term reliability prediction under statistical variations and Dynamic Voltage Scaling (DVS) in real circuit operation. To overcome these barriers, the modeling effort in this work (1) practically explains the aging statistics due to randomness in number of traps with log(t) model, accurately predicting the mean and variance shift; (2) proposes cycle-to-cycle model (from the …

Contributors
Velamala, Jyothi Bhaskarr Amarnadh, Cao, Yu, Clark, Lawrence, et al.
Created Date
2012

Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric …

Contributors
Dessai, Gajanan, Gildenblat, Gennady, Gildenblat, Gennady, et al.
Created Date
2012

Characterization of standard cells is one of the crucial steps in the IC design. Scaling of CMOS technology has lead to timing un-certainties such as that of cross coupling noise due to interconnect parasitic, skew variation due to voltage jitter and proximity effect of multiple inputs switching (MIS). Due to increased operating frequency and process variation, the probability of MIS occurrence and setup / hold failure within a clock cycle is high. The delay variation due to temporal proximity of MIS is significant for multiple input gates in the standard cell library. The shortest paths are affected by MIS due …

Contributors
Subramaniam, Anupama R., Cao, Yu, Chakrabarti, Chaitali, et al.
Created Date
2012