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Nickel-Copper metallization for silicon solar cells offers a cost effective alternative to traditional screen printed silver paste technology. The main objective of this work is to study the formation of nickel silicide contacts with and without native silicon dioxide SiO2. The effect of native SiO2 on the silicide formation has been studied using Raman spectroscopy, Rutherford backscattering spectrometry and sheet resistance measurements which shows that SiO 2 acts as a diffusion barrier for silicidation at low temperatures of 350°C. At 400°C the presence of SiO2 results in the increased formation of nickel mono-silicide phase with reduced thickness when compared to …
- JAIN, HARSH NARENDRAKUMAR, Bowden, Stuart, Alford, Terry, et al.
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