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ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable …

Contributors
Sharma, Ankur Ramesh, Johnson, Shane, Goryll, Michael, et al.
Created Date
2013

In mesoscopic physics, conductance fluctuations are a quantum interference phenomenon that comes from the phase interference of electron wave functions scattered by the impurity disorder. During the past few decades, conductance fluctuations have been studied in various materials including metals, semiconductors and graphene. Since the patterns of conductance fluctuations is related to the distributions and configurations of the impurity scatterers, each sample has its unique pattern of fluctuations, which is considered as a sample fingerprint. Thus, research on conductance fluctuations attracts attention worldwide for its importance in both fundamental physics and potential technical applications. Since early experimental measurements of conductance …

Contributors
Liu, Bobo, Ferry, David K, Akis, Richard, et al.
Created Date
2015

InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe. Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that …

Contributors
Shalindar Christraj, Arvind Joshua Jaydev, Johnson, Shane R, Alford, Terry L, et al.
Created Date
2016