ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at email@example.com.
- 2 English
- 2 Public
There is a pervasive need in the defense industry for conformal, low-profile, efficient and broadband (HF-UHF) antennas. Broadband capabilities enable shared aperture multi-function radiators, while conformal antenna profiles minimize physical damage in army applications, reduce drag and weight penalties in airborne applications and reduce the visual and RF signatures of the communication node. This dissertation is concerned with a new class of antennas called Magneto-Dielectric wire antennas (MDWA) that provide an ideal solution to this ever-present and growing need. Magneto-dielectric structures (μr>1;εr>1) can partially guide electromagnetic waves and radiate them by leaking off the structure or by scattering from any …
- Sebastian, Tom, Diaz, Rodolfo E, Pan, George, et al.
- Created Date
High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve resistivities of around 1000 ohm.cm, but the wafers contain oxygen that can lead to thermal donor formation with donor concentration significantly higher (~1015 cm-3) than the dopant concentration (~1012-1013 cm-3) of such high-resistivity Si leading to resistivity changes and possible type conversion of high-resistivity p-type silicon. In this research capacitance-voltage …
- Nayak, Pinakpani, Schroder, Dieter K, Vasileska, Dragica, et al.
- Created Date