ASU Electronic Theses and Dissertations
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Optoelectronic and microelectronic applications of germanium-based materials have received considerable research interest in recent years. A novel method for Ge on Si heteroepitaxy required for such applications was developed via molecular epitaxy of Ge5H12. Next, As(GeH3)3, As(SiH3)3, SbD3, S(GeH3)2 and S(SiH3)2 molecular sources were utilized in degenerate n-type doping of Ge. The epitaxial Ge films produced in this work incorporate donor atoms at concentrations above the thermodynamic equilibrium limits. The donors are nearly fully activated, and led to films with lowest resistivity values thus far reported. Band engineering of Ge was achieved by alloying with Sn. Epitaxy of the alloy …
- Senaratne, Charutha Lasitha, Kouvetakis, John, Chizmeshya, Andrew, et al.
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