ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at firstname.lastname@example.org.
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With the high demand for faster and smaller wireless communication devices, manufacturers have been pushed to explore new materials for smaller and faster transistors. One promising class of transistors is high electron mobility transistors (HEMT). AlGaAs/GaAs HEMTs have been shown to perform well at high power and high frequencies. However, AlGaN/GaN HEMTs have been gaining more attention recently due to their comparatively higher power densities and better high frequency performance. Nevertheless, these devices have experienced truncated lifetimes. It is assumed that reducing defect densities in these materials will enable a more direct study of the failure mechanisms in these devices. …
- McConkie, Thomas, Smith, David J, McCartney, Martha, et al.
- Created Date
In this dissertation, various characterization techniques have been used to investigate many aspects of the properties of III-nitride materials and devices for optoelectronic applications. The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in …
- Wang, Shuo, Ponce, Fernando A, Menendez, Jose, et al.
- Created Date