Skip to main content

ASU Electronic Theses and Dissertations


This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.


Subject
Date Range
2010 2019


Rapid expansion of dense beds of fine, spherical particles subjected to rapid depressurization is studied in a vertical shock tube. As the particle bed is unloaded, a high-speed video camera captures the dramatic evolution of the particle bed structure. Pressure transducers are used to measure the dynamic pressure changes during the particle bed expansion process. Image processing, signal processing, and Particle Image Velocimetry techniques, are used to examine the relationships between particle size, initial bed height, bed expansion rate, and gas velocities. The gas-particle interface and the particle bed as a whole expand and evolve in stages. First, the bed …

Contributors
Zunino, Heather, Adrian, Ronald J, Clarke, Amanda, et al.
Created Date
2019

Transient molecules are of great importance having proposed applications in quantum science and technology and tests of fundamental physics. In the present dissertation, the transient molecules studied are SrOH, ThF, ThCl, YbF and YbOH; each having been selected because of their proposed application. Specifically, SrOH is a candidate of constructing a molecular magneto-optical trap (MOT). The simple actinide molecules, ThF and ThCl, were selected as ligand bonding model systems to gain insight into chemical processing of Spent Nuclear Fuel. The lanthanides YbF and YbOH are venues for the determination of electron electric dipole moment (eEDM) and the studies in this …

Contributors
Nguyen, Duc Trung, Steimle, Timothy C, Richert, Ranko, et al.
Created Date
2019

Integrated oxide/semiconductor heterostructures have attracted intense interest for device applications which require sharp interfaces and controlled defects. The research of this dissertation has focused on the characterization of perovskite oxide/oxide and oxide/semiconductor heterostructures, and the analysis of interfaces and defect structures, using scanning transmission electrom microscopy (STEM) and related techniques. The SrTiO3/Si system was initially studied to develop a basic understanding of the integration of perovskite oxides with semiconductors, and successful integration with abrupt interfaces was demonstrated. Defect analysis showed no misfit dislocations but only anti-phase boundaries (APBs) in the SrTiO3 (STO) films. Similar defects were later observed in other …

Contributors
Wu, HsinWei, Smith, David J, McCartney, Martha r, et al.
Created Date
2018

Time-resolved serial femtosecond crystallography is an emerging method that allows for structural discovery to be performed on biomacromolecules during their dynamic trajectory through a reaction pathway after activation. This is performed by triggering a reaction on an ensemble of molecules in nano- or microcrystals and then using femtosecond X-ray laser pulses produced by an X-ray free electron laser to collect near-instantaneous data on the crystal. A full data set can be collected by merging a sufficient number of these patterns together and multiple data sets can be collected at different points along the reaction pathway by manipulating the delay time …

Contributors
Coe, Jesse, Fromme, Petra, Sayres, Scott, et al.
Created Date
2018

This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth conditions including Ga(acac)3 precursor pulse time, O2 plasma pulse time, N2 purge time and deposition temperature were investigated and optimized on phosphorus doped Si (100) wafer to achieve a saturated self-limiting growth. A temperature growth window was observed between 150 ℃ and 320 ℃. Ga precursor molecules can saturate on the substrate surface in 0.6 s in one cycle …

Contributors
Hao, Mei, Nemanich, Robert J., Ponce, Fernando, et al.
Created Date
2018

This dissertation describes the characterization of optoelectronic and electronic materials being considered for next generation semiconductor devices, primarily using electron microscopy techniques. The research included refinement of growth parameters for optimizing material quality, and investigation of heterostructured interfaces. The results provide better understanding of the fundamental materials science and should lead to future improvements in device applications. A microstructural study of tin selenide and tin manganese selenide thin films grown by molecular beam epitaxy (MBE) on GaAs (111)B substrates with different Se:Sn flux ratios and Mn concentrations was carried out. Low flux ratios lead to highly defective films, mostly consisting …

Contributors
Tracy, Brian David, Smith, David J, Bennett, Peter A, et al.
Created Date
2018

With the high demand for faster and smaller wireless communication devices, manufacturers have been pushed to explore new materials for smaller and faster transistors. One promising class of transistors is high electron mobility transistors (HEMT). AlGaAs/GaAs HEMTs have been shown to perform well at high power and high frequencies. However, AlGaN/GaN HEMTs have been gaining more attention recently due to their comparatively higher power densities and better high frequency performance. Nevertheless, these devices have experienced truncated lifetimes. It is assumed that reducing defect densities in these materials will enable a more direct study of the failure mechanisms in these devices. …

Contributors
McConkie, Thomas, Smith, David J, McCartney, Martha, et al.
Created Date
2018

The Cosmic Microwave Background (CMB) has provided precise information on the evolution of the Universe and the current cosmological paradigm. The CMB has not yet provided definitive information on the origin and strength of any primordial magnetic fields or how they affect the presence of magnetic fields observed throughout the cosmos. This work outlines an alternative method to investigating and identifying the presence of cosmic magnetic fields. This method searches for Faraday Rotation (FR) and specifically uses polarized CMB photons as back-light. I find that current generation CMB experiments may be not sensitive enough to detect FR but next generation …

Contributors
Kolopanis, Matthew, Bowman, Judd, Mauskopf, Philip, et al.
Created Date
2018

An electrical current with high spin polarization is desirable for the performance of novel spintronics devices, such as magnetic tunnel junction and giant magnetoresistance devices. The generation of spin polarized current can be from ferromagnetic materials or triplet superconductors. Anomalous Hall effect (AHE) is an effective way to study the properties of magnetic structures. The scattering of electrons by the magnetic moments affects the change of resistance, which can be used to detect the magnetization. In this dissertation, AHE is used to study the perpendicular magnetic anisotropy (PMA) structures, including Co/Pt and Ta/CoFeB/MgO. Domain walls exist in all ferromagnetic materials. …

Contributors
Zhao, Gejian, Chen, Tingyong, Bennett, Peter, et al.
Created Date
2018

The electronic states of semiconductor interfaces have significant importance for semiconductor device performance, especially due to the continuing miniaturization of device technology. The application of ultra high vacuum (UHV) enables the preparation and characterization of fresh and cleaned interfaces. In a UHV environment, photoemission spectroscopy (PES) provides a non-destructive method to measure the electronic band structure, which is a crucial component of interface properties. In this dissertation, three semiconductor interfaces were studies to understand different effects on electronic states. The interfaces studied were freshly grown or pre-treated under UHV. Then in-situ PES measurements, including x-ray photoemission spectroscopy (XPS) and ultra-violet …

Contributors
Wang, Xingye, Nemanich, Robert J, Chan, Candace, et al.
Created Date
2018