ASU Electronic Theses and Dissertations
- 2 English
- 2 Public
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions …
- Hill, Arlinda, Ponce, Fernando A, Chamberlin, Ralph V, et al.
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Light Emitting Diodes even with their longer life, robust build and low power consumption, they are still plagued by some problems the most significant of which are the current droop and thermal droop. Current droop causes a lowering in the Internal Quantum Efficiency with increased current injection while thermal droop lowers the whole Internal Quantum Efficiency curve with increase in temperature. The focus here was understanding effects of thermal droop and develop a method to control it. Shockley Read Hall recombination plays a dominant role in the thermal droop effect when the current injection is low. Since the blue light …
- Das, Shiladitya, Zhao, Yuji, Vasileska, Dragica, et al.
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