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Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions

Abstract In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in t... (more)
Created Date 2011
Contributor Ashraf, Nabil Shovon (Author) / Vasileska, Dragica (Advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Ensemble Monte Carlo simulation / Interface trap / On-current fluctuations / Random dopant fluctuations / Random telegraph noise / Threshold voltage fluctuations
Type Doctoral Dissertation
Extent 102 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis