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Electron transport properties in one-dimensional III-V nanowire transistors

Abstract Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. An... (more)
Created Date 2011
Contributor Liang, Hanshuang (Author) / Yu, Hongbin (Advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / FET / Nanowire / Solid State
Type Masters Thesis
Extent 43 pages
Language English
Reuse Permissions All Rights Reserved
Note M.S. Electrical Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis