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Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures

Abstract ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree... (more)
Created Date 2011
Contributor Tierney, Brian David (Author) / Goodnick, Stephen (Advisor) / Ferry, David (Committee member) / Akis, Richard (Committee member) / Saraniti, Marco (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Subject Nanotechnology / Electrical engineering / Physics / Computational Electronics / Device Simulation / Ensemble Monte Carlo / III-V semiconductors / Nanotechnology / Spintronics
Type Doctoral Dissertation
Extent 123 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis