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Accurate RTA-Based Non-Quasi-Static Compact MOSFET Model for RF and Mixed-Signal Simulations

Abstract The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation based NQS MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static (QS) description of the MOSFET. The model is implemented in two widely used circuit simulators and tested for speed and convergence. It is verified by comparison with technology comput... (more)
Created Date 2012
Contributor Zhu, Zeqin (Author) / Gildenblat, Gennady (Advisor) / Bakkaloglu, Bertan (Committee member) / Barnaby, Hugh (Committee member) / Mcandrew, Colin C (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / bulk charge / compact model / inversion charge / non-quasi-static (NQS) / relaxation time approximation (RTA) / surface potential
Type Doctoral Dissertation
Extent 152 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2012
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis