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Conversion of a Molecular Beam Epitaxy System for the Growth of 6.1 Angstrom Semiconductors

Abstract A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic devices that take advantage of the nearly continuous bandgap availability between 0 eV and 3.4 eV. These devices include multijunction solar cells and multicolor detectors. The MBE system upgrade involved the conversion of a former III-V chamber for II-VI growth. This required intensive cleaning of the chamber and components to prevent contamination. Special features including valved II-VI sources and the addition of a cold trap allowed for the full system to be baked to 200 degrees Celsius to improve vacuum conditions and reduce background impurity concent... (more)
Created Date 2012
Contributor Dettlaff, William Henry Gerald (Author) / Zhang, Yong-Hang (Advisor) / Vasileska, Dragica (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / III-V Semiconductors / II-VI Semiconductors / Molecular Beam Epitaxy / RHEED Oscillations / ZnSe / ZnTe
Type Masters Thesis
Extent 86 pages
Language English
Reuse Permissions All Rights Reserved
Note M.S. Electrical Engineering 2012
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis