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Characterization of MBE Grown Metal, Semiconductor and Superconductor Films and Interfaces by Concurrent Use of In Situ Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Energy Loss Spectroscopy (REELS)

Abstract This work is an investigation into the information provided by the concurrent use of in situ reflection high energy electron diffraction (RHEED) and reflection electron energy loss spectroscopy (REELS). The two analytical methods were employed during growth of metal, semiconductor and superconductor thin films by molecular beam epitaxy (MBE). Surface sensitivity of the REELS spectrometer was found to be less than 1 nm for 20 KeV electrons incident at a 2 degree angle to an atomically flat film surface, agreeing with the standard electron escape depth data when adjusted incident angle. Film surface topography was found to strongly influence the REELS spectra and this was correlated with in situ RHEED patterns and ex situ analysis by comparis... (more)
Created Date 2012
Contributor Strawbridge, Brett William (Author) / Newman, Nathan (Advisor) / Chamberlin, Ralph (Committee member) / Rizzo, Nicholas (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Electrical engineering / Physics / AlN / EELS / GaN / REELS / Resonant tunneling diode / RHEED
Type Doctoral Dissertation
Extent 152 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Engineering Science 2012
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis