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Material Properties of MBE Grown ZnTe, GaSb and Their Heterostructures for Optoelectronic Device Applications

Abstract Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of elec... (more)
Created Date 2012
Contributor Fan, Jin (Author) / Zhang, Yong-Hang (Advisor) / Smith, David (Committee member) / Yu, Hongbin (Committee member) / Menendez, Jose (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Subject Physics / Materials Science / Engineering / GaSb / Heterostructure / II-VI/III-V semiconductor integration / MBE / Optoelectronics / ZnTe
Type Doctoral Dissertation
Extent 147 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Physics 2012
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis