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Statistical Characterization and Decomposition of SRAM cell Variability and Aging


Abstract Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH varia... (more)
Created Date 2013
Contributor Ravi, Venkatesa Sarma (Author) / Cao, Yu (Advisor) / Bakkaloglu, Bertan (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / DRV / Reliability / SRAM
Type Masters Thesis
Extent 75 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note M.S. Electrical Engineering 2013
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis