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Modeling Reliability of Gallium Nitride High Electron Mobility Transistors

Abstract This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces... (more)
Created Date 2013
Contributor Padmanabhan, Balaji (Author) / Vasileska, Dragica (Advisor) / Goodnick, Stephen M (Committee member) / Alford, Terry L (Committee member) / Venkatraman, Prasad (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / electromechanical coupling / Gallium Nitride / HEMT / Monte Carlo / piezoelectric polarization / self-heating
Type Doctoral Dissertation
Extent 95 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2013
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis