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Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy


Abstract The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with ele... (more)
Created Date 2013
Contributor Juday, Reid (Author) / Ponce, Fernando A (Advisor) / Drucker, Jeff (Committee member) / Mccartney, Martha R (Committee member) / Menéndez, José (Committee member) / Shumway, John (Committee member) / Arizona State University (Publisher)
Subject Physics / Condensed matter physics / Cathodoluminescence / III-nitrides / Wurtzite / ZnO
Type Doctoral Dissertation
Extent 147 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note Ph.D. Physics 2013
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis