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Epitaxy of group IV optical materials and synthesis of IV/III-V semiconductor analogs by designer hydride chemistries

Abstract The thesis studies new methods to fabricate optoelectronic Ge1-ySny/Si(100) alloys and investigate their photoluminescence (PL) properties for possible applications in Si-based photonics including IR lasers. The work initially investigated the origin of the difference between the PL spectrum of bulk Ge, dominated by indirect gap emission, and the PL spectrum of Ge-on-Si films, dominated by direct gap emission. It was found that the difference is due to the supression of self-absorption effects in Ge films, combined with a deviation from quasi-equilibrium conditions in the conduction band of undoped films. The latter is confirmed by a model suggesting that the deviation is caused by the shorter recombination lifetime in the films relative to... (more)
Created Date 2013
Contributor Grzybowski, Gordon J. (Author) / Kouvetakis, John (Advisor) / Chizmeshya, Andrew (Committee member) / Menendez, Jose (Committee member) / Arizona State University (Publisher)
Subject Chemistry / Materials Science / Physics / CVD / Epitaxy / germanium / photonics / silicon / tin
Type Doctoral Dissertation
Extent 140 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Chemistry 2013
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis