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Synthesis and Band Gap Engineering in Ge1-x-ySixSny Materials for Near-IR Wavelength Applications

Abstract This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-ric... (more)
Created Date 2013
Contributor Xu, Chi (Author) / Kouvetakis, John (Advisor) / Menendez, Jose (Advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Subject Physics / Materials Science / Chemistry / band gap / devices / ellipsometry / epitaxy / Germanium / GeSiSn
Type Doctoral Dissertation
Extent 176 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Physics 2013
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis