Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface. (C) 2013 AIP Publishing LLC.
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- Quantitative Analysis of Strain Distribution in InAs/InAs1−xSbx Superlattices
- Zhang, Yong-Hang (Author)
- Mahalingam, Krishnamurthy (Author)
- Steenbergen, Elizabeth H. (Author)
- Brown, Gail J. (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
- Digital object identifier: 10.1063/1.4817969
- Identifier TypeInternational standard serial numberIdentifier Value0003-6951
- Identifier TypeInternational standard serial numberIdentifier Value1077-3118
- Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in Applied Physics Letters, 103(6), 061908. doi:10.1063/1.4817969 and may be found at (http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4817969), opens in a new window.
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Mahalingam, K., Steenbergen, E. H., Brown, G. J., & Zhang, Y.-H. (2013). Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices. Applied Physics Letters, 103(6), 061908. doi:10.1063/1.4817969