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Nanowire Specialty Diodes for Integrated Applications


Abstract Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication of vertically oriented Si and Ge nanowire diodes and modeling their electrical behavior so that they can be utilized to create unique three dimensional architectures that can boost the scaling of electronic devices into the next generation. In this study, vertical Ge and Si nanowire Schottky diodes have been fabricated using bottom-up vapor-liquid-solid (VLS) and top-down reactive ion etchin... (more)
Created Date 2014
Contributor Chandra, Nishant (Author) / Goodnick, Stephen M (Advisor) / Tracy, Clarence J (Committee member) / Yu, Hongbin (Committee member) / Ferry, David K (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / fabrication / nanowire / passivation / reactive-ion-etching / schottky / vapor-liquid-solid
Type Doctoral Dissertation
Extent 164 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2014
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis