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Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions

Abstract Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices.

Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature T<sub>dep</sub> among the samples to change crystalline and physical properties. Hi... (more)
Created Date 2014
Contributor Karow, Matthias (Author) / Honsberg, Christiana B (Advisor) / Faleev, Nikolai N (Committee member) / Ning, Cun-Zheng (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Physics / Materials Science / Carrier Localization / Excitation Dependent Photoluminescence / High Resolution X-ray Diffraction / InGaAs / Molecular Beam Epitaxy / Multiple Quantum Wells
Type Masters Thesis
Extent 90 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2014
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis