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Static Behavior of Chalcogenide Based Programmable Metallization Cells

Abstract Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.

To advance the PMC modeling effort, this thesis presents a... (more)
Created Date 2014
Contributor Rajabi, Saba (Author) / Barnaby, Hugh (Advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Nanoscience / Materials Science / CBRAM / impedance / memory / modelling / PMC / Programmable metallization cell
Type Masters Thesis
Extent 56 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2014
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis