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Structural Properties of III-Nitride Semiconductors


Abstract Group III-nitride semiconductors have been commercially used in the fabrication of light-emitting diodes and laser diodes, covering the ultraviolet-visible-infrared spectral range and exhibit unique properties suitable for modern optoelectronic applications. InGaN ternary alloys have energy band gaps ranging from 0.7 to 3.4 eV. It has a great potential in the application for high efficient solar cells. AlGaN ternary alloys have energy band gaps ranging from 3.4 to 6.2 eV. These alloys have a great potential in the application of deep ultra violet laser diodes. However, there are still many issues with these materials that remain to be solved. In this dissertation, several issues concerning structural, electronic, and optical propertie... (more)
Created Date 2014
Contributor Wei, Yong (Author) / Ponce, Fernando (Advisor) / Chizmeshya, Andrew (Committee member) / McCartney, Martha (Committee member) / Menéndez, José (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Subject Physics / critical thickness / GaN / III-nitride / InGaN / Light emitting device / TEM
Type Doctoral Dissertation
Extent 140 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Physics 2014
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis