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Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source

Abstract Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface.

In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which ... (more)
Created Date 2014
Contributor Saha, Arunodoy (Author) / Tao, Meng (Advisor) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Subject Engineering / Electrical engineering / Bulk Passivation / Bulk treatment / Grain Boundary Passivation / Sulfur passivation
Type Masters Thesis
Extent 64 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2014
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis