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Retention of Programmable Metallization Cells During Ionizing Radiation Exposure

Abstract Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they do not rely on charge storage to maintain a logic state. Depending on their application, it i... (more)
Created Date 2015
Contributor Taggart, Jennifer Lynn (Author) / Barnaby, Hugh (Advisor) / Kozicki, Michael (Committee member) / Holbert, Keith (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Materials Science / Flash / Non-volatile Memory / Programmable Metallization Cell / Radiation Environment / Resistive Memory / Solid-state
Type Masters Thesis
Extent 58 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2015
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis