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Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

Abstract Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors ... (more)
Created Date 2015
Contributor Kao, Wei-Chieh (Author) / Goryll, Michael (Advisor) / Chowdhury, Srabanti (Committee member) / Yu, Hongbin (Committee member) / Marinella, Matthew (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Characterization / Interface State / Metal Oxide Semiconductor Capacitors / Silicon Carbide
Type Doctoral Dissertation
Extent 117 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Electrical Engineering 2015
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis