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Study of Structural, Optical and Electrical Properties of InAs/InAsSb Superlattices Using Multiple Characterization Techniques


Abstract InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.

The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.

After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including e... (more)
Created Date 2015
Contributor Shen, Xiaomeng (Author) / Zhang, Yong-Hang (Advisor) / Smith, David J (Advisor) / Alford, Terry (Committee member) / Goryll, Michael (Committee member) / McCartney, Martha R (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Physics / Electrical engineering / Characterization / Infrared detector / Molecular Beam Epitaxy / Superlattice
Type Doctoral Dissertation
Extent 138 pages
Language English
Copyright
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Note Doctoral Dissertation Materials Science and Engineering 2015
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis