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GaN-on-Si RF Switched Mode Power Amplifiers for Non-Constant Envelope Signals

Abstract This work implements three switched mode power amplifier topologies namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The presented power amplifiers address practical implementation design constraints and explore the fundamental performance limitations of switched-mode power amplifiers for cellular band. The designs are analyzed and compared with respect to non-idealities like finite on-resistance, finite-Q of inductors, bond-wire effects, input signal duty cycle, and supply and component variations. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as... (more)
Created Date 2015
Contributor Shukla, Shishir Ramasare (Author) / Kitchen, Jennifer N (Advisor) / Bakkaloglu, Bertan (Committee member) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Subject Engineering / Electrical engineering / CDMA / LTE / Non-constant envelope / Power Amplifiers / ZCS / ZVS
Type Masters Thesis
Extent 66 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2015
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis