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Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

Abstract A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors.

Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature li... (more)
Created Date 2016
Contributor Marrs, Michael A (Author) / Raupp, Gregory B (Advisor) / Allee, David R (Committee member) / Dai, Lenore L (Committee member) / Forzani, Erica S (Committee member) / Bawolek, Edward J (Committee member) / Arizona State University (Publisher)
Subject Chemical engineering / Materials Science / Electrical engineering / display / electronics / flexible / oxide / TFT / x-ray
Type Doctoral Dissertation
Extent 199 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Chemical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis