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Characterization of Cubic Boron Nitride Interfaces with in situ Photoelectron Spectroscopy

Abstract Cubic boron nitride (c-BN) has potential for electronic applications as an electron emitter and serving as a base material for diodes, transistors, etc. However, there has been limited research on c-BN reported, and many of the electronic properties of c-BN and c-BN interfaces have yet to be reported. This dissertation focused on probing thin film c-BN deposited via plasma enhanced chemical vapor deposition (PECVD) with in situ photoelectron spectroscopy (PES). PES measurements were used to characterize the electronic properties of c-BN films and interfaces with vacuum and diamond. First, the interface between c-BN and vacuum were characterized with ultraviolet PES (UPS). UPS measurements indicated that as-deposited c-BN, H2 plasma treated ... (more)
Created Date 2016
Contributor Shammas, Joseph (Author) / Nemanich, Robert J (Advisor) / Ponce, Fernando (Committee member) / Chen, Tingyong (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Subject Physics / Materials Science / c-BN / chemical vapor deposition / cubic boron nitride / PECVD / plasma enhanced chemical vapor deposition / XPS
Type Doctoral Dissertation
Extent 150 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Physics 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis