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Reliability Issues and Design Solutions in Advanced CMOS Design

Abstract Over decades, scientists have been scaling devices to increasingly smaller feature sizes for ever better performance of complementary metal-oxide semiconductor (CMOS) technology to meet requirements on speed, complexity, circuit density, power consumption and ultimately cost required by many advanced applications. However, going to these ultra-scaled CMOS devices also brings some drawbacks. Aging due to bias-temperature-instability (BTI) and Hot carrier injection (HCI) is the dominant cause of functional failure in large scale logic circuits. The aging phenomena, on top of process variations, translate into complexity and reduced design margin for circuits. Such issues call for “Design for Reliability”. In order to increase the overall desi... (more)
Created Date 2016
Contributor BANSAL, ANKITA (Author) / Cao, Yu (Advisor) / Seo, Jae Sun (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Subject Engineering / Electrical engineering
Type Masters Thesis
Extent 44 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis