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Structural and Optical Properties of Molecular Beam Epitaxy Grown InAsBi Bulk Layers and Quantum Wells

Abstract InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.

Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substit... (more)
Created Date 2016
Contributor Shalindar Christraj, Arvind Joshua Jaydev (Author) / Johnson, Shane R (Advisor) / Alford, Terry L (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Electrical engineering / Quantum physics / Applied Sciences / Bismuth / InAsBi / Optoelectronic / Pure Sciences / Quantum Wells
Type Masters Thesis
Extent 89 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Materials Science and Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis