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Temperature Dependent Qualities of Amorphous Silicon and Amorphous Silicon Carbide Passivating Stacks

Abstract Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide

were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased pres... (more)
Created Date 2016
Contributor Jackson, Alec J. (Author) / Holman, Zachary (Advisor) / Bertoni, Mariana (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Electrical engineering / carbide / heterojunction / hydrogen / passivation / silicon / solar
Type Masters Thesis
Extent 54 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis