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Chemical Vapor Deposition of Metastable Germanium Based Semiconductors for Optoelectronic Applications

Abstract Optoelectronic and microelectronic applications of germanium-based materials have received considerable research interest in recent years. A novel method for Ge on Si heteroepitaxy required for such applications was developed via molecular epitaxy of Ge5H12. Next, As(GeH3)3, As(SiH3)3, SbD3, S(GeH3)2 and S(SiH3)2 molecular sources were utilized in degenerate n-type doping of Ge. The epitaxial Ge films produced in this work incorporate donor atoms at concentrations above the thermodynamic equilibrium limits. The donors are nearly fully activated, and led to films with lowest resistivity values thus far reported.

Band engineering of Ge was achieved by alloying with Sn. Epitaxy of the alloy layers was conducted on virtual Ge substrates, and ... (more)
Created Date 2016
Contributor Senaratne, Charutha Lasitha (Author) / Kouvetakis, John (Advisor) / Chizmeshya, Andrew (Committee member) / Menéndez, José (Committee member) / Arizona State University (Publisher)
Subject Chemistry / Physics / Electrical engineering / direct gap / germanium-tin / infrared / LED / n-type doping
Type Doctoral Dissertation
Extent 270 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Chemistry 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis