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Study of Minority Carrier Lifetime and Transport in InAs/InAsSb type-II Superlattices Using a Real-Time Baseline Correction Method


Abstract Sb-based type-II superlattices (T2SLs) are potential alternative to HgCdTe for infrared detection due to their low manufacturing cost, good uniformity, high structural stability, and suppressed Auger recombination. The emerging InAs/InAsSb T2SLs have minority carrier lifetimes 1-2 orders of magnitude longer than those of the well-studied InAs/InGaSb T2SLs, and therefore have the potential to achieve photodetectors with higher performance. This work develops a novel method to measure the minority carrier lifetimes in infrared materials, and reports a comprehensive characterization of minority carrier lifetime and transport in InAs/InAsSb T2SLs at temperatures below 77 K.

A real-time baseline correction (RBC) method for minority carrier ... (more)
Created Date 2016
Contributor Lin, Zhiyuan (Author) / Zhang, Yong-Hang (Advisor) / Vasileska, Dragica (Committee member) / Johnson, Shane (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Subject Engineering / Electrical engineering / Carrier Lifetime / Carrier Transport / InAs/InAsSb Type-II Superlattice
Type Doctoral Dissertation
Extent 125 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Electrical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis