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Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface


Abstract Gallium Nitride (GaN) based microelectronics technology is a fast growing and most exciting semiconductor technology in the fields of high power and high frequency electronics. Excellent electrical properties of GaN such as high carrier concentration and high carrier motility makes GaN based high electron mobility transistors (HEMTs) a preferred choice for RF applications. However, a very high temperature in the active region of the GaN HEMT leads to a significant degradation of the device performance by effecting carrier mobility and concentration. Thus, thermal management in GaN HEMT in an effective manner is key to this technology to reach its full potential.

In this thesis, an electro-thermal model of an AlGaN/GaN HEMT on a SiC substra... (more)
Created Date 2016
Contributor Suri, Suraj (Author) / Zhao, Yuji (Advisor) / Vasileska, Dragika (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Mining / GaN / Heat dissipation / HEMT / Temperature / Thermal management
Type Masters Thesis
Extent 57 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis